M28F101 Datasheet – 1Mb 128Kx8, Chip Erase Flash Memory IC

Overview

The M28F101 FLASH Memory is a non-volatile memory that may be erased electrically at the chip level and programmed byte-by-byte. It is or- gained as 128K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor inter- face. The M28F101 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high-speed microprocessor systems.

Part Number	M28F101
Function	1 Mb (128K x 8, Chip Erase) FLASH MEMORY
Package	DIP, PLCC, TSOP 32 Pin Type
Manufacturer	STMicroelectronics
Datasheet	Download PDF

M28F101 Features

• 5V±10% SUPPLY VOLTAGE
• 12V PROGRAMMING VOLTAGE
• FAST ACCESS TIME: 70ns
• BYTE PROGRAMMING TIME: 10µs typical
• ELECTRICAL CHIP ERASE in 1s RANGE
• LOW POWER CONSUMPTION – Stand-by Current: 100µA max
• 10,000 ERASE/PROGRAM CYCLES
• INTEGRATED ERASE/PROGRAM-STOP TIMER
• OTP COMPATIBLE PACKAGES and PINOUTS
• ELECTRONIC SIGNATURE
  • Manufacturer Code: 20h
  • Device Code: 07h

Absolute Maximum Ratings

Symbol	Parameter	Value	Unit
TA	Ambient Operating Temperature	–40 to 125	°C
TSTG	Storage Temperature	–65 to 150	°C
VIO	Input or Output Voltages	–0.6 to 7	V
VCC	Supply Voltage	–0.6 to 7	V
VA9	A9 Voltage	–0.6 to 13.5	V
Vpp	Program Supply Voltage, during Erase or Programming	–0.6 to 14	V

M28F101 Pinout

Pin Definitions

Pin Name	Description
A0-A16	Address Inputs
DQ0-DQ7	Data Inputs / Outputs
E	Chip Enable
G	Output Enable
W	Write Enable
VPP	Program Supply
VCC	Supply Voltage
VSS	Ground

Applications

• Non-volatile storage
• Embedded systems
• Firmware storage
• Program code storage
• Bootloader memory

M28F101 Datasheet

Download the M28F101 IC Datasheet from the link given below.