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1N5817 Shottky Barrier Diode

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Series 1N5800 / 1N5300
1N5817 Shottky Barrier Diode - Datasheet

1N5817 overview

The 1N5817 is a Shottky Barrier Diode made by Motorola. Main ratings: Peak Repeat Reverse Voltage 20V; Max. RMS Reverse Voltage 14V; Average Rectified Current 1.0A; Max. Reverse Current 1.0mA. The absolute maximum ratings table on this page lists the 8 limits from the manufacturer's datasheet that must not be exceeded. This page brings together the 1N5817 key specifications and maximum ratings, with the full datasheet PDF to preview below or download.

The 1N5817 Schottky Barrier Diode is a low-cost, high-efficiency diode with extremely low forward voltage drop. The 1N5817 is suitable for forwarding currents of up to 1A and has a reverse voltage rating of 20V. The diode is particularly suited to high-frequency inverters and as a general polarity protection diode.

1N5817 Shottky Barrier Diode

Key specifications

Peak Repeat Reverse Voltage (Vrrm)
20V
Max. RMS Reverse Voltage (Vr)
14V
Average Rectified Current (Io)
1.0A
Max. Reverse Current (Ir)
1.0mA
Max. Forward Voltage Drop (Vf)
0.45V

Datasheet

1n5817-9.pdf
Format PDFSize 96 KBLanguage ENRevision Rev. 3
Third-party / unverified source

Absolute maximum ratings

ParameterValueUnit
Peak Repetitive Reverse Voltage20V
Non-Repetitive Peak Reverse Voltage24V
RMS Reverse Voltage14V
Average Rectified Forward Current (2)1.0A
Ambient Temperature (Rated V (dc), P85°C
Non-Repetitive Peak Surge Current25 (for one cycle)A
Operating and Storage Junction Temperature Range (Reverse Voltage applied)-65 to +125°C
Peak Operating Junction Temperature (Forward Current applied)150°C

1N5817 datasheet PDF preview

PDF · 96 KB

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