Skip to content
Trademarks and datasheets are the property of their respective owners

1N5818 Shottky Barrier Diode

Published Updated 10 views
Series 1N5800 / 1N5300
1N5818 Shottky Barrier Diode - Datasheet

1N5818 overview

The 1N5818 is a Shottky Barrier Diode made by Motorola. Main ratings: Peak Repeat Reverse Voltage 30V; Max. RMS Reverse Voltage 21V; Average Rectified Current 1.0A; Max. Reverse Current 1.0mA. The absolute maximum ratings table on this page lists the 8 limits from the manufacturer's datasheet that must not be exceeded. This page brings together the 1N5818 key specifications and maximum ratings, with the full datasheet PDF to preview below or download.

1N5818 Shottky Barrier Diode

Key specifications

Peak Repeat Reverse Voltage (Vrrm)
30V
Max. RMS Reverse Voltage (Vr)
21V
Average Rectified Current (Io)
1.0A
Max. Reverse Current (Ir)
1.0mA
Max. Forward Voltage Drop (Vf)
0.55V

Datasheet

1n5817-9-1.pdf
Format PDFSize 96 KBLanguage ENRevision Rev. 3
Third-party / unverified source

Absolute maximum ratings

ParameterValueUnit
Peak Repetitive Reverse Voltage30V
Non-Repetitive Peak Reverse Voltage36V
RMS Reverse Voltage21V
Average Rectified Forward Current (2)1.0A
Ambient Temperature (Rated V (dc), P80°C
Non-Repetitive Peak Surge Current25 (for one cycle)A
Operating and Storage Junction Temperature Range (Reverse Voltage applied)-65 to +125°C
Peak Operating Junction Temperature (Forward Current applied)150°C

1N5818 datasheet PDF preview

PDF · 96 KB

Comments 0

Leave a comment