FS6S0765RCB Datasheet – Fairchild Power Switch (FPS)
FS6S0765RCB overview
The FS6S0765RCB is a Fairchild Power Switch(FPS) made by Fairchild Semiconductor, supplied in a TO-220-5L Type package. Main ratings: Drain-Source(GND) Voltage 650; Drain-Gate Voltage 650; Gate-Source (GND) Voltage VGS ±30; Drain Current Pulsed (2) IDM 28. The absolute maximum ratings table on this page lists the 11 limits from the manufacturer's datasheet that must not be exceeded. This page brings together the FS6S0765RCB key specifications and maximum ratings, with the full datasheet PDF to preview below or download.
The Fairchild Power Switch (FPS) product family is specially designed for an offline SMPS with minimal external components. The Fairchild Power Switch(FPS) consists of high voltage power Sense FET and current mode PWM IC. Included PWM controller features an integrated fixed oscillator, under voltage lockout, optimized gate turn on/turn off the driver, thermal shutdown protection, over-voltage protection, and temperature-compensated precision current sources for loop compensation and fault protection circuitry. Compared to discrete MOSFET and controller or RCC switching converter solution, a Fairchild Power Switch(FPS) can reduce total component count, design size, and weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for cost-effective monitor power supply.
Key specifications
Datasheet
FS6S0765RCB features
- Internal Burst Mode Controller for Stand-by Mode
- Pulse by Pulse Over Current Limiting
- Over Current Protection (Auto Restart Mode)
- Over Voltage Protection (Auto Restart Mode)
- Over Load Protection (Auto Restart Mode)
- Internal Thermal Shutdown Function (Auto Restart Mode)
- Under Voltage Lockout
- Internal High Voltage SenseFET
- Internal Sync Terminal/Soft Start
FS6S0765RCB specifications
| Drain-Source (GND) Voltage (1) | 650 V |
|---|---|
| Drain-Gate Voltage (RGS=1MΩ) | 650 V |
| Gate-Source (GND) Voltage VGS | ±30 V |
| Drain Current Pulsed (2) IDM | 28 ADC |
| Single Pulsed Avalanche Energy (3) EAS | 570 17mJ |
| Continuous Drain Current (Tc = 25°C) ID | 7 A |
| Continuous Drain Current (TC=100°C) ID | 4.5 ADC |
| Supply Voltage VCC | 35 ADC |
| Input Voltage Range | −0.3 to VCC−0.3 to 10 V |
| Total Power Dissipation | 1451.163 WW/°C |
| Operating Junction Temperature Tj | +150 °C |
| Operating Ambient Temperature TA | −25 to +85 °C |
| Storage Temperature Range TSTG | −55 to +150 °C |
Absolute maximum ratings
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| (Ta=25°C, unless otherwise specified) Drain-Source (GND) Voltage (1) | VDSS | 650 | V |
| Gate-Source (GND) Voltage | VGS | ±30 | V |
| Single Pulsed Avalanche Energy (3) | 570 | mJ | |
| Single Pulsed Avalanche Current (4) | IAS | 17 | A |
| Continuous Drain Current (Tc = 25°C) | 7 | A | |
| Supply Voltage | VCC | 35 | V |
| P (Watt H/S) | 145 | W | |
| Darting | 1.163 | W/°C | |
| Operating Junction Temperature | +150 | °C | |
| j Operating Ambient Temperature | -25 to +85 | °C | |
| Storage Temperature Range | -55 to +150 | °C |
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