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Samsung Integrated Circuit - IC's

K6T4008U1C-GB10 Datasheet – 512Kx8 bit, Static RAM

512Kx8 bit Low Power and Low Voltage CMOS Static RAM

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Package SOP 32 Type
K6T4008U1C-GB10 datasheet (PDF) Preview Buy K6T4008U1C-GB10

K6T4008U1C-GB10 overview

The K6T4008U1C-GB10 is a 512Kx8 bit Low Power and Low Voltage CMOS Static RAM made by Samsung, supplied in an SOP 32 Type package. Main ratings: Organization 512K´8; Power Supply Voltage K6T4008V1C Family 3.0~3.6V K6T4008U1C Family: 2.7~3.3V; K6T4008V1C Family 3.0~3.6V; K6T4008U1C Family 2.7~3.3V. The absolute maximum ratings table on this page lists the 6 limits from the manufacturer's datasheet that must not be exceeded. This page brings together the K6T4008U1C-GB10 pinout, key specifications and maximum ratings, with the full datasheet PDF to preview below or download.

The K6T4008V1C and K6T4008U1C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature range and have various package type for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current

Key specifications

Organization
512K´8
Power Supply Voltage K6T4008V1C Family
3.0~3.6V K6T4008U1C Family: 2.7~3.3V
K6T4008V1C Family
3.0~3.6V
K6T4008U1C Family
2.7~3.3V
Low Data Retention Voltage
2V(Min)

Datasheet

k6t4008u1c-datasheet.pdf
Format PDFSize 184 KBLanguage ENRevision Rev. 1.0
Third-party / unverified source
Open datasheet Download

K6T4008U1C-GB10 features

  • Process Technology: TFT
  • Three state output and TTL Compatible
  • Package Type: 32-SOP-525, 32-TSOP2-400F/R 32-TSOP1-0820F, 32-TSOP1-0813.4F
  • 32-TSOP1-0820F, 32-TSOP1-0813.4F

K6T4008U1C-GB10 pinout

K6T4008U1C-GB10 pinout diagram
NameDescription
A0~A18Address Inputs
WEWrite Enable Input
CSChip Select Input
OEOutput Enable Input

Absolute maximum ratings

ParameterSymbolValueUnit
Voltage on any pin relative to VssVIN,VOUTRatings -0.5 to VCC+0.5V
Voltage on Vcc supply relative to VssVCCRatings -0.3 to 4.6V
Power DissipationPDRatings 1.0W
Storage temperatureTSTGRatings -65 to 150°C
Operating TemperatureTARatings 0 to 70 / Remark K6T4008V1C-L, K6T4008U1C-L°C
-40 to 85°CRatings K6T4008V1C-P, K6T4008U1C-P

K6T4008U1C-GB10 applications

  • DRAM Memory Modules
  • Computer Mainboards
  • Embedded Systems
  • Consumer Electronics
  • Networking Equipment

K6T4008U1C-GB10 datasheet PDF preview

PDF · 184 KB

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